mtd: spinand: add support for Dosilicon DS35Q1GA/DS35M1GA
Subsystems (2)
PATCH v2 1/1 mtd: spinand: add support for Dosilicon DS35Q1GA/DS35M1GA
Add support for Dosilicon DS35Q1GA (3.3V) and DS35M1GA (1.8V) SPI NAND.
These are 1Gbit (128MB) devices with:
- 2048 byte pages + 64 byte OOB
- 64 pages per block, 1024 blocks
- On-die 4-bit ECC per 512 byte sector
The 64-byte OOB area is divided into 4 segments of 16 bytes, with each segment containing 8 bytes of user data (M2+M1) and 8 bytes of ECC parity (R1). This provides 30 bytes of usable OOB space after reserving 2 bytes for the bad block marker.
Tested on Genexis Platinum 4410 (EcoNet EN751221) by writing known patterns to OOB and verifying ECC parity placement in R1 regions.
Datasheet:
https://www.dosilicon.com/resources/SPI%20NAND/DS35X1GAXXX_rev08.pdf
---
Changes in v2:
- Rebased on rc1 (updated SPINAND_OP_VARIANTS macros)
- Fixed OOB layout based on hardware testing:
- ECC regions: bytes 8-15, 24-31, 40-47, 56-63 (32 bytes total)
- Free regions: bytes 2-7, 16-23, 32-39, 48-55 (30 bytes total)
- Updated commit message
--- drivers/mtd/nand/spi/Makefile | 4 +- drivers/mtd/nand/spi/core.c | 1 + drivers/mtd/nand/spi/dosilicon.c | 91 ++++++++++++++++++++++++++++++++ include/linux/mtd/spinand.h | 1 + 4 files changed, 95 insertions(+), 2 deletions(-) create mode 100644 drivers/mtd/nand/spi/dosilicon.c
drivers/mtd/nand/spi/Makefile +2 -2
@@ -1,5 +1,5 @@ # SPDX-License-Identifier: GPL-2.0 spinand-objs := core.o otp.o -spinand-objs += alliancememory.o ato.o esmt.o fmsh.o foresee.o gigadevice.o macronix.o -spinand-objs += micron.o paragon.o skyhigh.o toshiba.o winbond.o xtx.o +spinand-objs += alliancememory.o ato.o dosilicon.o esmt.o fmsh.o foresee.o gigadevice.o +spinand-objs += macronix.o micron.o paragon.o skyhigh.o toshiba.o winbond.o xtx.o obj-$(CONFIG_MTD_SPI_NAND) += spinand.o
drivers/mtd/nand/spi/core.c +1 -0
@@ -1227,6 +1227,7 @@ static const struct nand_ops spinand_ops = {static const struct spinand_manufacturer *spinand_manufacturers[] = { &alliancememory_spinand_manufacturer, &ato_spinand_manufacturer, + &dosilicon_spinand_manufacturer, &esmt_8c_spinand_manufacturer, &esmt_c8_spinand_manufacturer, &fmsh_spinand_manufacturer,
drivers/mtd/nand/spi/dosilicon.c new file +91 -0
91 lines not on this page · raw message
include/linux/mtd/spinand.h +1 -0
@@ -354,6 +354,7 @@ struct spinand_manufacturer {/* SPI NAND manufacturers */ extern const struct spinand_manufacturer alliancememory_spinand_manufacturer;extern const struct spinand_manufacturer ato_spinand_manufacturer; +extern const struct spinand_manufacturer dosilicon_spinand_manufacturer;extern const struct spinand_manufacturer esmt_8c_spinand_manufacturer;extern const struct spinand_manufacturer esmt_c8_spinand_manufacturer;extern const struct spinand_manufacturer fmsh_spinand_manufacturer;
Signature · 1 line
2.34.1
Miquel Raynal
maintainerHello Ahmed,
Quoted 15 lines · Ahmed Naseef
Add support for Dosilicon DS35Q1GA (3.3V) and DS35M1GA (1.8V) SPI NAND.
These are 1Gbit (128MB) devices with:
- 2048 byte pages + 64 byte OOB
- 64 pages per block, 1024 blocks
- On-die 4-bit ECC per 512 byte sectorThe 64-byte OOB area is divided into 4 segments of 16 bytes, with each segment containing 8 bytes of user data (M2+M1) and 8 bytes of ECC parity (R1). This provides 30 bytes of usable OOB space after reserving 2 bytes for the bad block marker.
Tested on Genexis Platinum 4410 (EcoNet EN751221) by writing known patterns to OOB and verifying ECC parity placement in R1 regions.
Quoted 7 lines
Datasheet:
https://www.dosilicon.com/resources/SPI%20NAND/DS35X1GAXXX_rev08.pdfSigned-off-by Ahmed Naseef <[email protected]>---
Changes in v2:
- Rebased on rc1 (updatedSPINAND_OP_VARIANTSmacros)
Thanks for this v2. It overall looks good to me but we are in the middle of the merge window, so when I was saying "at -rc1" I meant "the next one" which will be tagged next Sunday. It is probably fine as-is though, so I'll try to apply the patch and will tell you if there are any conflicts.
Thanks,
Miquèl
Quoted 8 lines · Ahmed Naseef
Add support for Dosilicon DS35Q1GA (3.3V) and DS35M1GA (1.8V) SPI NAND.
These are 1Gbit (128MB) devices with:
- 2048 byte pages + 64 byte OOB
- 64 pages per block, 1024 blocks
- On-die 4-bit ECC per 512 byte sector[...]
Applied to nand/next, thanks!
[1/1] mtd: spinand: add support for Dosilicon DS35Q1GA/DS35M1GA
(no commit info)
Patche(s) should be available on mtd/linux.git and will be part of the next PR (provided that no robot complains by then).
Kind regards,
Miquèl